Chamber for backside deposition

A method of depositing a film on a backside of a substrate, the method comprising:

• (a) introducing a substrate into a process chamber;
• (b) lowering the substrate onto a capture ring that is positioned in a processing volume of the process chamber, wherein the capture ring has a top side and a bottom side, wherein the top side faces a heater within the processing volume and the bottom side faces a showerhead within the processing volume, and wherein the capture ring is supported on and spaced above the showerhead by a plurality of spacer pins;
• and
• (c) contacting the backside of the substrate with energized particles through the capture ring to deposit the film on the backside.

A semiconductor processing system comprising:

• a chamber body having a central axis;
• a heater positioned in the chamber body, wherein the heater is axially movable within the chamber body along the central axis;
• a showerhead positioned in the chamber body and axially spaced from the heater;
• a pumping liner positioned in the chamber body that extends circumferentially about the central axis, wherein the showerhead and the heater are at least partially axially received within the pumping liner so that a processing volume is defined within the pumping liner axially between the heater and the showerhead;
• and
• a capture ring positioned in the processing volume, wherein the capture ring is suspended between the heater and the showerhead on a plurality of spacer pins that are engaged with the showerhead and the capture ring, and wherein the capture ring is configured to support a substrate in the processing volume so that a backside of the substrate is exposed to energized particles emitted from the showerhead.