Semiconductor device

A semiconductor device comprising:

• a first electrode;
• a second electrode;
• a third electrode;
• a fourth electrode;
• a fifth electrode;
• a sixth electrode;
• a semiconductor member;
• a first insulating member;
• and
• a second insulating member,
• the semiconductor member including
• a first semiconductor region including Alx1Ga1-x1N (0<x1≤1),
• a second semiconductor region including Alx2Ga1-x2N (0≤x2<1, x2<x1), and
• a third semiconductor region including Alx3Ga1-x3N (0<x3≤1, x2<x3),
• a direction from the first semiconductor region to the first electrode, the second electrode, the third electrode, the fourth electrode, the fifth electrode, and the sixth electrode being along a first direction,
• a second direction from the first electrode to the second electrode intersecting with the first direction,
• a third electrode position of the third electrode in the second direction being between a first electrode position of the first electrode in the second direction and a second electrode position of the second electrode in the second direction,
• the second semiconductor region including a first partial region, a second partial region, and a third partial region,
• the first partial region being between the first semiconductor region and the first electrode in the first direction,
• the second partial region being between the first semiconductor region and the second electrode in the first direction,
• the third partial region being between the first semiconductor region and the third electrode in the first direction,
• the third semiconductor region including a first semiconductor portion and a second semiconductor portion,
• the first semiconductor portion being between the first partial region and the first electrode,
• the second semiconductor portion being between the second partial region and the second electrode,
• at least a part of the third electrode being between the first semiconductor portion and the second semiconductor portion in the second direction,
• at least a part of the first insulating member being between the third electrode and the semiconductor member,
• a third direction from the fourth electrode to the fifth electrode intersecting with the first direction,
• a sixth electrode position of the sixth electrode in the third direction being between a fourth electrode position of the fourth electrode in the third direction and a fifth electrode position of the fifth electrode in the third direction,
• the second semiconductor region further including a fourth partial region, a fifth partial region, and a sixth partial region,
• the fourth partial region being between the first semiconductor region and the fourth electrode in the first direction,
• the fifth partial region being between the first semiconductor region and the fifth electrode in the first direction,
• the sixth partial region being between the first semiconductor region and the sixth electrode in the first direction,
• at least a part of the sixth electrode being between the fourth partial region and the fifth partial region in the third direction,
• at least a part of the second insulating member being between the sixth electrode and the semiconductor member,
• a <0001> direction of the first semiconductor region being along a second orientation from the first semiconductor region to the second semiconductor region.

A semiconductor device comprising:

• a first electrode;
• a second electrode;
• a third electrode;
• a fourth electrode;
• a fifth electrode;
• a sixth electrode;
• a semiconductor member;
• a first insulating member;
• and
• a second insulating member,
• the semiconductor member including
• a first semiconductor region including Alx1Ga1-x1N (0<x1≤1),
• a second semiconductor region including Alx2Ga1-x2N (0≤x2<1, x2<x1),
• a third semiconductor region including Alx3Ga1-x3N (0<x3≤1), and
• a fourth semiconductor region including Alx4Ga1-x4N (0≤x4<1, x4<x3),
• a direction from the first semiconductor region to the first electrode, the second electrode, and the third electrode being along a first direction,
• a second direction from the first electrode to the second electrode intersecting with the first direction,
• a third electrode position of the third electrode in the second direction being between a first electrode position of the first electrode in the second direction and a second electrode position of the second electrode in the second direction,
• the second semiconductor region including a first partial region and a second partial region,
• the first partial region being between the first semiconductor region and the first electrode in the first direction,
• the second partial region being between the first semiconductor region and the second electrode in the first direction,
• at least a part of the third electrode being between the first partial region and the second partial region in the second direction,
• a <0001> direction of the first semiconductor region being along a first orientation from the first semiconductor region to the second semiconductor region,
• at least a part of the first insulating member being between the third electrode and the semiconductor member,
• a direction from the third semiconductor region to the fourth electrode, the fifth electrode, and the sixth electrode being along the first direction,
• a third direction from the fourth electrode to the fifth electrode intersecting with the first direction,
• a sixth electrode position of the sixth electrode in the third direction being between a fourth electrode position of the fourth electrode in the third direction and a fifth electrode position of the fifth electrode in the third direction,
• the fourth semiconductor region including a fourth partial region and a fifth partial region,
• the fourth partial region being between the third semiconductor region and the fourth electrode in the first direction,
• the fifth partial region being between the third semiconductor region and the fifth electrode in the first direction,
• at least a part of the sixth electrode being between the fourth partial region and the fifth partial region in the third direction,
• a <0001> direction of the third semiconductor region being along a second orientation from the fourth semiconductor region to the third semiconductor region,
• at least a part of the second insulating member being between the sixth electrode and the semiconductor member.