Semiconductor device and method for manufacturing same

A semiconductor device comprising:

• a first chip;
• and
• a second chip, the first chip and the second chip being bonded to each other,
• wherein the first chip includes
• a first insulating layer that is bonded to the second chip, and
• a plurality of via contact electrodes that extend in a first direction through the first insulating layer at different positions in a second direction intersecting the first direction, and
• the second chip includes
• a second insulating layer,
• a plurality of wirings that are arranged in the second direction, extend in a third direction intersecting the first direction and the second direction, have side surfaces in the second direction that are covered with the second insulating layer, and are bonded to the plurality of via contact electrodes, and
• a third insulating layer that covers surfaces of the second insulating layer and the plurality of wirings on a first chip side in the first direction and contains silicon (Si), carbon (C), and nitrogen (N).

A method for manufacturing a semiconductor device, the method comprising:

• forming a plurality of contact holes that extend in a first direction at different positions in a second direction intersecting the first direction in a first insulating layer of a first wafer;
• forming a first conductive layer on a surface of the first insulating layer and in the plurality of contact holes;
• forming a plurality of via contact electrodes by removing a part of the first conductive layer formed on the surface of the first insulating layer by a first flattening treatment;
• forming a plurality of grooves that are arranged in the second direction and extend in a third direction intersecting the first direction and the second direction in a second insulating layer of a second wafer;
• forming a second conductive layer on a surface of the second insulating layer and in the plurality of grooves;
• forming a plurality of wirings by removing a part of the second conductive layer formed on the surface of the second insulating layer by a second flattening treatment;
• forming a third insulating layer containing silicon (Si), carbon (C), and nitrogen (N) on surfaces of the second insulating layer and the plurality of wirings of the second wafer;
• and
• bonding a surface of the first wafer and a surface of the second wafer.