Switching circuit and power supply circuit
AssigneeSharp Kabushiki Kaisha
InventorTAKESHI SHIOMI
Life of this patent
Estimating the term…
Abstract
A switching circuit includes two series transistors: a high-withstand-voltage transistor and a low-withstand-voltage transistor. A high-voltage terminal of the low-withstand-voltage transistor is connected to a reference terminal of the high-withstand-voltage transistor. A control terminal of the high-withstand-voltage transistor includes a transistor-control path connected to a reference terminal of the low-withstand-voltage transistor. The transistor-control path includes parallel elements: a gate resistor and a gate diode. An inter-terminal capacitance of the gate diode is equal to or less than 20% of an input capacitance of the high-withstand-voltage transistor.
Claims5
A switching circuit comprising two series transistors,
- wherein the switching circuit is structured
- such that a high-withstand-voltage transistor is disposed on a high-voltage side, and a low-withstand-voltage transistor is disposed on a low-voltage side, and
- such that a high-voltage terminal of the low-withstand-voltage transistor is connected to a reference terminal of the high-withstand-voltage transistor, and
- the switching circuit comprises a transistor-series path from a reference terminal of the low-withstand-voltage transistor to the reference terminal of the high-withstand-voltage transistor,
- a control terminal of the high-withstand-voltage transistor includes a transistor-control path connected to the reference terminal of the low-withstand-voltage transistor,
- wherein the transistor-control path includes a gate resistor,
- wherein the gate resistor is connected to a gate diode in parallel, and
- wherein the gate diode is structured
- such that an anode is connected to the control terminal of the high-withstand-voltage transistor,
- such that a cathode is connected to the reference terminal of the low-withstand-voltage transistor, and
- such that an inter-terminal capacitance is equal to or less than 20% of an input capacitance of the high-withstand-voltage transistor.
Dependencies are inferred from the claim text.