Thin film resistor and method of forming the same

A method of forming a thin film resistor, comprising:

• forming an insulated oxide film on an upper surface of a substrate;
• forming a first inner electrode pair on two ends of the insulated oxide film;
• performing a DC multi-target hybrid sputtering operation to deposit a resistor layer on a portion of the insulated oxide film and a portion of the first inner electrode pair;
• performing an RF-DC hybrid sputtering operation to deposit a doping layer over the resistor layer;
• performing an annealing operation so as to oxidize the doping layer to form an oxidized doping film, wherein the oxidized doping film comprises aluminum oxide and silicon oxide;
• forming a passivation layer on the oxidized doping film;
• forming a first insulated protective layer on the passivation layer;
• and
• forming a second inner electrode pair on the ends of the insulated oxide film.