Silicon based detection device which detects the short-wave infrared (swir) wavelengths

A system for generating a frequency-converted optical signal from a SWIR input signal wave, comprising:

• a three-dimensional resonant optical structure, comprising:
• a silicon layer exhibiting third-order nonlinearity (χ(3));
• a first reflector and a second reflector, wherein the silicon layer is positioned between the first reflector and the second reflector, thereby forming a resonant cavity configured to support phase-matched nonlinear optical interactions,
• wherein the input signal wave has sufficient optical power to undergo FWM within the silicon layer without requiring a pump wave, thereby generating an idler wave at a converted wavelength, enabling further processing or detection.

A method for generating a frequency-converted optical signal from a SWIR input signal wave, comprising:

• providing a three-dimensional resonant optical structure comprising:
• a silicon layer exhibiting third-order nonlinearity (χ(3));
• a first reflector and a second reflector, wherein the silicon layer is positioned between the first reflector and the second reflector, thereby forming a resonant cavity configured to support phase-matched nonlinear optical interactions;
• generating a coherent electromagnetic pump wave at a controlled wavelength using a pump generator;
• inputting the SWIR input signal wave and the pump wave into the three-dimensional resonant optical structure;
• facilitating FWM within the silicon layer between the input signal wave and the pump wave, thereby generating an idler wave at a converted wavelength;
• and
• converting the idler wave into a corresponding electrical signal with a silicon electro-optical detector via two-photon absorption or free carrier absorption.