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US 2026/0275548 A1Published application
Nitride Semiconductor Photoelectrode and Method for Manufacturing the Same
AssigneeNippon Telegraph and Telephone Corporation
InventorsSayumi Sato, Yuya Uzumaki, Akihiro Kono, Takeshi Komatsu
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Abstract
A nitride semiconductor photoelectrode including: a conductive membrane formed on a substrate; and a polycrystalline nitride semiconductor membrane formed on the conductive membrane and having lattice distortion of 0.35% or less. The polycrystalline nitride semiconductor membrane has a surface irradiated in an aqueous solution with light opposed to the surface to cause a redox reaction.
Claims8
A nitride semiconductor photoelectrode comprising:
- a conductive membrane formed on a substrate;
- and
- a polycrystalline nitride semiconductor membrane formed on the conductive membrane and having lattice distortion of 0.35% or less,
- wherein the polycrystalline nitride semiconductor membrane has a surface irradiated in an aqueous solution with light opposed to the surface to cause a redox reaction.
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A method for manufacturing a nitride semiconductor photoelectrode, the method comprising:
- a step of forming a conductive membrane on a substrate;
- a step of forming a precursor of a polycrystalline nitride semiconductor on the conductive membrane;
- and
- a step of obtaining a polycrystalline nitride semiconductor membrane by heating a laminate of the substrate, the conductive membrane, and the precursor at an ammonia flow rate of 5 L/min or less.
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Dependencies are inferred from the claim text.