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US 2026/0274606 A1Published application
Semiconductor device and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHengyuan Lee, Xinyu BAO
Life of this patent
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Abstract
A semiconductor device includes a first conductive layer, a memory layer, a second conductive layer and a selector layer. The memory layer surrounds the first conductive layer. The second conductive layer faces the memory layer. The selector layer is disposed on the second conductive layer and faces the memory layer. A first side of the second conductive layer is covered by the selector layer.
Claims20
A semiconductor device, comprising:
- a first conductive layer;
- a memory layer surrounding the first conductive layer;
- a second conductive layer facing the memory layer;
- and
- a selector layer on the second conductive layer and facing the memory layer, wherein a first side of the second conductive layer is covered by the selector layer.
2 more elements
A semiconductor device, comprising:
- a plurality of first conductive lines, extending along a first direction and stacked along a second direction substantially perpendicular to the first direction;
- a pillar structure, penetrating through first portions of the first conductive lines and extending along the second direction, and comprising a second conductive line and a memory layer surrounding the second conductive line;
- and
- a first selector pillar, penetrating through second portions of the first conductive lines and extending along the second direction.
1 more element
A method of forming a semiconductor device, comprising:
- forming a stack comprising a first conductive layer between a first dielectric layer and a second dielectric layer;
- forming a first opening in the stack to penetrate through the first dielectric layer, the first conductive layer and the second dielectric layer;
- recessing one of the first dielectric layer and the first conductive layer through the first opening, to form a first recess;
- forming a second conductive layer in the first recess;
- recessing the other of the first dielectric layer and the first conductive layer through the first opening, to form a second recess;
- forming a selector layer in the second recess;
- and
- forming a conductive structure in the first opening.
5 more elements
Dependencies are inferred from the claim text.