Back contact solar cell, manufacturing method thereof, and photovoltaic module

A back contact solar cell, comprising:

• a substrate having a front surface and a back surface disposed opposite to each other, the back surface comprising first doped regions and second doped regions arranged alternately, and the first doped region and the second doped region each comprising a first sub-region and a second sub-region;
• a first doped semiconductor layer disposed corresponding to a corresponding first doped region, the first doped semiconductor layer containing a first doping element;
• a second doped semiconductor layer disposed corresponding to a corresponding second doped region, the second doped semiconductor layer containing a second doping element, a conductivity type of the second doping element different from a conductivity type of the first doping element;
• a first tunneling layer located between the substrate and the first doped semiconductor layer;
• a first intrinsic amorphous silicon layer located between the substrate and the second doped semiconductor layer;
• a transparent conductive layer comprising a plurality of first conductive portions and a plurality of second conductive portions, the first conductive portion located on a side of the first doped semiconductor layer away from the substrate and disposed at least corresponding to the first sub-region of the first doped region, and the second conductive portion located on a side of the second doped semiconductor layer away from the substrate and disposed at least corresponding to the first sub-region of the second doped region;
• a first electrode disposed corresponding to the first sub-region of the first doped region and located on a side of the first conductive portion away from the substrate;
• a second electrode disposed corresponding to the first sub-region of the second doped region and located on a side of the second conductive portion away from the substrate;
• and
• a first anti-reflection layer comprising a plurality of first anti-reflection portions, the first anti-reflection portions being located on sides of the first doped semiconductor layer and the second doped semiconductor layer away from the substrate and disposed corresponding to the second sub-region of the first doped region and the second sub-region of the second doped region.