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US 2026/0271281 A1Published application
Semiconductor device and method of manufacturing the semiconductor device
AssigneeSK hynix Inc.
InventorJae Ho KIM
Life of this patent
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Abstract
A semiconductor device includes: a source structure comprising a cell area and an edge area; a stack located on the edge area of the source structure; a gate structure located on the cell area of the source structure; a channel structure connected to the cell area of the source structure by extending through the gate structure; and a read-only memory area.
Claims13
A method of manufacturing a semiconductor device, the method comprising:
- forming a source structure;
- forming a first contact plug passing through the source structure;
- forming a first stack on the source structure;
- forming a first sacrificial layer passing through the first stack and connected to the first contact plug;
- forming a second stack on the first stack;
- forming a second sacrificial layer passing through the second stack and connected to the first sacrificial layer;
- and
- forming the first contact plug and a second contact plug connected to the first contact plug in a read-only memory area by replacing the first sacrificial layer and the second sacrificial layer with the second contact plug.
5 more elements
Dependencies are inferred from the claim text.