Method for growing silicon carbide crystal

Abstract

The present disclosure provides a method for growing a silicon carbide crystal comprising steps of: A) putting silicon carbide raw material into a growth crucible, B) placing porous silicon into the growth crucible, with lower surface of the porous silicon attached to upper surface of the silicon carbide raw material, and C) performing growing to obtain a silicon carbide crystal. The porous silicon acts as a source of Si during the growth process, to balance the carbon-to-silicon ratio in the gas phase. This prevents excessive carbon from precipitating as carbon particles on the surface of the seed crystal, thereby avoiding the formation of carbon particle inclusions, as well as microtubes and dislocations evolved from the carbon particle inclusions.

Dependencies are inferred from the claim text.