Method for manufacturing semiconductor device, and semiconductor device

A method for manufacturing a semiconductor device, comprising:

• preparing a first substrate including a first support substrate, a first insulating film provided on the first support substrate, and a first electrode provided in a first recess of the first insulating film and exposed from a first surface side of the first insulating film;
• preparing a second substrate including a second support substrate, a second insulating film provided on the second support substrate, and a second electrode provided in a second recess of the second insulating film and exposed from a second surface side of the second insulating film;
• bonding the first insulating film of the first substrate and the second insulating film of the second substrate to each other;
• and
• bonding the first electrode of the first substrate and the second electrode of the second substrate to each other,
• wherein the first insulating film includes an organic insulating film, the first electrode includes a first electrode body provided in the first recess, a first barrier metal provided on at least one of an inner surface and a bottom surface of the first recess to cover a part of the first electrode body, and a second barrier metal covering a surface of the first electrode body on an opening side of the first recess, and
• wherein a bonding strength between the first insulating film and the first barrier metal is 30 MPa or more.