Semiconductor structure and manufacturing method threreof

A method of manufacturing a semiconductor structure, comprising:

• providing a semiconductor substrate defined with an active area and an idle area adjacent to each other, wherein a plurality of semiconductor substrate units are disposed on the active area, and each of the semiconductor substrate units is defined with an electrical contact dense area and an electrical contact sparse area;
• forming a plurality of conductive bumps on each of the semiconductor substrate units in the active area;
• and
• forming a plurality of current control bumps on the idle area, wherein a density of the plurality of conductive bumps in the electrical contact dense areas is higher than a density of the plurality of current control bumps in the idle area, and a density of the plurality of current control bumps in the idle area is higher than a density of the plurality of conductive bumps in the electrical contact sparse areas.