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US 2026/0262334 A1Published application
P-type doping in gan leds for high speed operation at low current densities
AssigneeAvicenaTech, Corp.
InventorsBardia Pezeshki, Cameron Danesh
Life of this patent
Estimating the term…
Abstract
A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with the barriers doped, may be part of an optical communications system.
Claims9
1-7. (canceled)
An optical communication system making use of an LED as a light source, comprising:
- LED drive circuitry coupled to a data source, the LED drive circuitry configured to generate current based on data received from the data source;
- an LED coupled to the LED drive circuitry so as to receive current to drive the LED with a current density of greater than 4000 A/cm2 to generate light encoding the data at a data rate of 3.0 Gb/s or greater, the LED comprising a p type GaN layer, an n type GaN layer, and a plurality of alternating quantum well layers and barrier layers between the p type GaN layer and the n type GaN layer, with the quantum well layers being undoped and with the barrier layers being p-doped with magnesium (Mg) with a doping concentration of at least 1019/cm3;
- and
- a detector to receive light generated by the LED, the detector configured to provide an electrical signal representative of data in the received light;
- and
- a coherent fiber bundle optically between the LED and the detector.
3 more elements
(canceled)
11-13. (canceled)
Dependencies are inferred from the claim text.