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AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsRyuichiro KAWAI, Hiroaki HORIE, Mari SHIGETA, Kenji SHIMADA
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A cleaning composition for semiconductor substrates including: a component (A): at least one selected from the group consisting of hydrofluoric acid, a salt of hydrofluoric acid, an acid having an anion represented by general formula (a) as a conjugate base, and a salt of an acid having an anion represented by general formula (a) as a conjugate base, a component (B): a compound represented by the following general formula (b): wherein M is boron, silicon, zirconium, antimony, niobium, aluminum, phosphorus, or titanium, k is the oxidation number of M, m is an integer of 0 or more and k/2 or less, x is a positive integer, R is a hydrogen atom, an alkali metal, or an alkyl group, and n is a coordination number of the fluoride ion to M; a component (C): an oxidant; and a component (D): water, wherein α represented by the following Expression (I) is 0.2 or more and 1.1 or less, α = [ F ] ∑ ( n ( M ) · [ M ] ) ( I ) wherein [F] is the molar concentration of the fluoride ion in the composition, [M] is the molar concentration of M in the composition, and n(M) is the coordination number of the fluoride ion to M.
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Dependencies are inferred from the claim text.