Design method of semiconductor structure

A design method of a semiconductor structure, wherein the semiconductor structure comprises n conductive layers and a via, the n conductive layers are separated from each other, there is an opening in the semiconductor structure, the via is located in the opening, the opening penetrates through the n conductive layers to form n holes in the n conductive layers, the via and top surfaces of n−1 conductive layers have n−1 annular overlapping regions, n is an integer greater than 1, and the design method of the semiconductor structure comprises:

• providing an (n−1)th minimum diameter at a top of an (n−1)th hole;
• defining a distance between a bottom of an (n−1)th conductive layer and a bottom of an nth conductive layer, an interface resistance between the (n−1)th conductive layer and the via, an included angle between a top surface of the (n−1)th conductive layer and a sidewall of the via, and a thickness of the (n−1)th conductive layer;
• calculating a side resistance between a sidewall of the (n−1)th conductive layer exposed by the (n−1)th hole and the via;
• calculating an overlap resistance of an (n−1)th annular overlapping region;
• calculating a width of the (n−1)th annular overlapping region based on the (n−1)th minimum diameter, the thickness, the side resistance, and the overlap resistance;
• and
• calculating an nth minimum diameter at a top of an nth hole based on the included angle, the (n−1)th minimum diameter, the width, and the distance.