Optoelectronic device and method for processing the same

An optoelectronic device comprising:

• a semiconductor layer stack comprising a planar first semiconductor layer of a first doping type, an active layer and a second semiconductor layer of a second doping type, wherein the second semiconductor layer comprises a main emission surface layer portion;
• a contact layer arranged on the first semiconductor layer opposite at least a first portion of the active layer;
• and
• a structured contact layer arranged on the second semiconductor layer opposite a second portion of the active layer,
• wherein the first portion and the second portion are spatially offset in a lateral direction to each other and configured to increase a local charge carrier density in an active region of the active layer partially common to or adjacent to the first and second portions of the active layer, and
• wherein the active region is defined by a projection of an overlapping section of the first and second portions onto the active layer.

A method for processing an optoelectronic device, the method comprising:

• providing a mesa-etched layer stack having a first semiconductor layer of a first doping type, a second semiconductor layer of a second doping type and an active layer in between;
• depositing a contact layer on the first semiconductor layer opposite at least a first portion of the active layer;
• rebonding the layer stack and removing a substrate to expose the second semiconductor layer;
• and
• depositing a structured contact layer on the second semiconductor layer opposite a second portion of the active layer such that at least a portion of a surface of the second semiconductor layer opposite the contact layer is exposed,
• wherein depositing the contact layer and the structured contact layer are conducted such that the layers are laterally spatially offset from each other to increase a local charge carrier density in an active region of the active layer partially common to or adjacent to the first and second portion of the active layer,
• wherein the active region is defined by a projection of an overlapping section of the first and second portions onto the active layer.