Semiconductor device
AssigneeInfineon Technologies Austria AG
InventorsYuting CHUANG, Li Yi PENG
Life of this patent
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Abstract
According to some embodiments, a method comprises generating a threshold voltage measurement for each semiconductor die in a set of semiconductor dies, generating an on current measurement for each semiconductor die in the set of semiconductor dies, selecting a subset of semiconductor dies from the set of semiconductor dies such that each semiconductor die in the subset has a threshold voltage measurement meeting a first threshold and an on current measurement meeting a second threshold, and mounting the subset of semiconductor dies in a semiconductor device package.
Claims20
An integrated circuit device package, comprising:
- a first semiconductor die comprising a first transistor having a first gate terminal, a first source terminal, and a first drain terminal;
- a second semiconductor die comprising a second transistor having a second gate terminal, a second source terminal, and a second drain terminal;
- and
- a third semiconductor die comprising a third transistor having a third gate terminal, a third source terminal, and a third drain terminal, wherein:
- the first source terminal, the second source terminal, and the third source terminal are connected in parallel;
- the first drain terminal, the second drain terminal, and the third drain terminal are connected in parallel;
- a variation of a first threshold voltage of the first transistor, a second threshold voltage of the second transistor, and a third threshold voltage of the third transistor is less than about 30 percent;
- and
- a sum of a first on current of the first transistor, a second on current of the second transistor, and a third on current of the third transistor equals a current rating of the integrated circuit device package.
A method, comprising:
- generating a threshold voltage measurement for each semiconductor die in a set of semiconductor dies;
- generating an on current measurement for each semiconductor die in the set of semiconductor dies;
- selecting a subset of semiconductor dies from the set of semiconductor dies such that each semiconductor die in the subset has a threshold voltage measurement meeting a first threshold and an on current measurement meeting a second threshold;
- and
- mounting the subset of semiconductor dies in a semiconductor device package.
A method, comprising:
- operating each semiconductor die in a set of semiconductor dies mounted to a semiconductor package in parallel;
- identifying a faulty semiconductor die in the set of semiconductor dies;
- excluding the faulty semiconductor die from the set of semiconductor dies to generate a modified set of semiconductor dies;
- and
- operating each semiconductor die in the modified set of semiconductor dies in parallel.
Dependencies are inferred from the claim text.