Wafer surface temperature measurement method and apparatus

Abstract

Wafer surface temperature measurement method relates to technical field of semiconductor manufacturing, comprises: calcining fluorescent indicator at different preset calcining temperatures, calibrating marked temperature of fluorescent indicator after being calcined at same calcining temperature for different time periods; heating wafer having fluorescent indicator arranged, fluorescent indicator is distributed at preset positions on wafer at interval; acquiring measured temperatures of fluorescent indicator on wafer; and obtaining heating temperatures and heating time periods of fluorescent indicator, according to calcining temperature to fluorescent indicator, marked temperatures of fluorescent indicator after being calcined for different time periods, and measured temperatures of fluorescent indicator on wafer, thereby obtaining heating temperatures and heating time periods of corresponding positions on wafer surface, Being able to obtain both heating temperatures on wafer surface and heating time periods of wafer at same time, obtaining real thermal power being absorbed by wafer surface.

Dependencies are inferred from the claim text.