Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium, gas supply system and substrate processing apparatus

Abstract

There is provided a technique capable of suppressing a deterioration of one or both of a uniformity of film characteristics within a surface of a substrate and a uniformity of the film characteristics between surfaces of substrates, caused by an insufficient supply of a source gas. The technique may include: (a) storing a source gas in a first gas pipe by closing a first valve of the first gas pipe and supplying the source gas from an upstream side of the first gas pipe; and (b) supplying the source gas and a first inert gas through the first gas pipe to a substrate by opening the first valve of the first gas pipe and supplying the first inert gas from the upstream side of the first gas pipe.

Dependencies are inferred from the claim text.