Protection of semiconductor devices from optical scanning

Abstract

Methods, systems, and devices for protection of semiconductor devices from optical scanning are described. A semiconductor device may implement one or more material layers that are configured for refracting photonic emissions, which may impair an ability to use such photonic emissions for adverse analysis of the semiconductor device. For example, a semiconductor device may include one or more layers that include geometric structures that are configured to refract photonic emissions from the semiconductor device. Additionally, or alternatively, a semiconductor device may include one or more layers with different doping configurations (e.g., with different refractive indexes) that are configured to refract photonic emissions from the semiconductor device.

Dependencies are inferred from the claim text.