Piezoelectric microelectromechanical device and method of manufacture

Abstract

According to an example aspect of the present invention, there is provided a method for manufacturing a microelectromechanical system, MEMS, device, comprising: forming at least one cantilever from a highly doped silicon layer on a buried oxide layer, the at least one cantilever having a first sidewall and a second sidewall, wherein the first and second sidewalls are perpendicular to the interface between the highly doped silicon layer and the buried oxide layer; growing a lead-free piezoelectric layer at least on the first sidewall and the second sidewall; and depositing electrically conductive material at least on the lead-free piezoelectric layer on the first sidewall and the second sidewall in order to form a first electrically conductive layer on the lead-free piezoelectric layer on the first sidewall and a second electrically conductive layer on the lead-free piezoelectric layer on the second sidewall.

Dependencies are inferred from the claim text.