Bulk acoustic wave filter
AssigneeSTMicroelectronics International N.V.
InventorMohamed BOUFNICHEL
Life of this patent
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Abstract
The present disclosure relates to a method for manufacturing a bulk acoustic wave filter comprising the consecutive following steps: providing a semiconductor substrate; forming first and second air cavities buried within the semiconductor substrate, the first air cavity being sandwiched between the second air cavity and a top face of semiconductor substrate, and having lateral dimensions smaller than those of second air cavity; and thinning semiconductor substrate by forming trenches surrounding first air cavity and opening into second air cavity.
Claims20
A method for manufacturing a bulk acoustic wave filter comprising:
- a) providing a semiconductor substrate;
- b) forming first and second air cavities buried within the semiconductor substrate, the first air cavity being sandwiched between the second air cavity and a top face of the semiconductor substrate and having lateral dimensions smaller than those of the second air cavity;
- and
- c) thinning the semiconductor substrate by forming trenches surrounding the first air cavity and opening into the second air cavity;
- wherein steps a), b), and c) are performed consecutively.
A bulk acoustic wave filter comprising:
- a semiconductor substrate in which first and second air cavities are formed buried within the semiconductor substrate, the first air cavity being sandwiched between the second air cavity and a top face of the semiconductor substrate and having lateral dimensions smaller than those of the second air cavity;
- wherein the semiconductor substrate is thinned by forming trenches surrounding the first air cavity and opening into the second air cavity.
An electronic device comprising:
- a radio frequency integrated circuit including at least one filter, the filter comprising:
- a semiconductor substrate in which first and second air cavities are formed buried within the semiconductor substrate, the first air cavity being sandwiched between the second air cavity and a top face of the semiconductor substrate and having lateral dimensions smaller than those of the second air cavity;
- wherein the semiconductor substrate is thinned by forming trenches surrounding the first air cavity and opening into the second air cavity.
Dependencies are inferred from the claim text.