Patterning Method Applicable in Semiconductor Processing

A method for patterning in a semiconductor production process, the method comprising:

• producing, on a support substrate, a layer that is to be patterned according to a pre-defined pattern in a semiconductor die area of the layer,
• printing, according to a lithographic exposure, a part of the pattern in a corresponding sub-portion of the die area, and
• wherein the pattern comprises one or more parallel line-shaped features configured to extend from a first sub-portion of the die area to a second sub-portion directly adjacent the first sub-portion,
• wherein printing a first part of the pattern includes one of the lithographic exposures printing a first part of the one or more parallel line-shaped features;
• and
• wherein printing a second part of the pattern includes one of the lithographic exposures printing a second part of the one or more parallel line-shaped features, and wherein the first part and the second part are printed in consecutive process sequences;
• wherein the second part of the one or more parallel line-shaped features are aligned to and distanced from the first part of the one or more parallel line-shaped features, so that after performing the consecutive process sequences and after transferring the first part and second part of the pattern to the layer, the layer is patterned according to a pattern including at least one pair of mutually aligned trenches.

A method comprising:

• producing, on a support substrate, a layer that is to be patterned according to a pre-defined pattern in a semiconductor die area of the layer,
• printing a part of the pattern in a corresponding sub-portion of the die area, and
• wherein the pattern extends from a first sub-portion of the die area to a second sub-portion directly adjacent the first sub-portion,
• wherein printing a first part of the pattern includes printing a first part of the one or more parallel line-shaped features;
• and
• wherein printing a second part of the pattern includes printing a second part of the pattern, and wherein the first part and the second part are printed in consecutive process sequences;
• wherein the second part of the pattern is aligned to and distanced from the first part of the pattern, so that after performing the consecutive process sequences and after transferring the first part and second part of the pattern to the layer, the layer is patterned according to a pattern including at least one pair of mutually aligned trenches.