Thin film forming material, method of forming thin film, and semiconductor substrate and semiconductor device fabricated using the same

Abstract

The present invention relates to a thin film forming material, a method of forming a thin film, and a semiconductor substrate and semiconductor device fabricated using the same. According to the present invention, by applying a predetermined material capable of forming a metal thin film or a metal nitride thin film through a reduction or catalytic reaction as a thin film forming material, a thin film having low resistivity may be effectively manufactured. In addition, impurities of the thin film caused by ligands such as carbon may be reduced, and thin film properties such as resistivity and crystallinity may be improved.

Dependencies are inferred from the claim text.