Carrier substrate structure and method of manufacturing integrated circuit device using the same

A method of manufacturing an integrated circuit device, the method comprising:

• forming a carrier substrate structure comprising a de-bonding layer, a light absorbing layer and a bonding layer that are sequentially stacked on a carrier substrate;
• bonding an integrated circuit substrate structure on the bonding layer, the integrated circuit substrate structure comprising the integrated circuit device;
• forming a device structure on the integrated circuit substrate structure, the device structure being electrically connected with the integrated circuit device;
• and
• irradiating the carrier substrate structure with light to de-bond the de-bonding layer and the light absorbing layer,
• wherein the de-bonding layer comprises a metallic oxide, and
• wherein the de-bonding layer has a thermal expansion coefficient that is 10 times or greater than 10 times a thermal expansion coefficient of the light absorbing layer.

A method of manufacturing an integrated circuit device, the method comprising:

• bonding an integrated circuit substrate structure on a carrier substrate structure comprising a de-bonding layer, a light absorbing layer, a protecting layer, a buffer layer and a bonding layer that are sequentially stacked on a carrier substrate, the integrated circuit substrate structure comprising the integrated circuit device;
• and
• irradiating the carrier substrate structure with light having a wavelength of 9300 nm or greater to de-bonding the de-bonding layer from the light absorbing layer,
• wherein the de-bonding layer comprises a metallic oxide,
• wherein the de-bonding layer has a thermal expansion coefficient that is 10 times or greater than 10 times a thermal expansion coefficient of the light absorbing layer,
• wherein the de-bonding layer and the light absorbing layer absorb the light, and
• wherein the protecting layer reflects the light.