Contact strap extending to common source/drain region of adjacent gate structures

A structure comprising:

• a trench structure lined with insulator materials;
• adjacent gate structures with a common diffusion region on opposing sides of the trench structure;
• a shallow trench isolation structure underneath the trench structure;
• and
• a contact extending over the trench structure and the shallow trench isolation structure and connecting to the common diffusion region.

A method comprising:

• forming a first gate structure;
• forming a second gate structure adjacent to the first gate structure;
• forming a common diffusion region to the first gate structure and the second gate structure;
• forming a trench lined with insulator material;
• and
• forming a contact strap extending within the trench and connecting to the common diffusion region.