Methods of fabricating bulk acoustic wave resonators and filters
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsRenyuan Wang, Andrew M. Carlin
Life of this patent
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Abstract
A method of fabricating a bulk acoustic wave resonator comprises forming a recess in a substrate, forming a sacrificial material in the recess, forming a lower electrode on substrate and the sacrificial material, and forming an alternating polarization piezoelectric film stack that comprises at least two piezoelectric films using a molecular beam epitaxy system without removing the substrate from the molecular beam epitaxy system.
Claims26
A method of fabricating a bulk acoustic wave resonator, the method comprising:
- forming a first metal-polar piezoelectric film on a substrate;
- forming a first polarization inversion interlayer on the first metal-polar piezoelectric film via molecular beam epitaxy;
- forming a first N-polar nucleation layer on the first polarization inversion interlayer;
- and
- forming a first N-polar piezoelectric film on the first N-polar nucleation layer via molecular beam epitaxy.
5-9. (canceled)
12-13. (canceled)
(canceled)
(canceled)
A method of fabricating a bulk acoustic wave resonator, the method comprising:
- forming a recess in a substrate;
- forming a sacrificial material in the recess;
- forming a lower electrode on substrate and the sacrificial material;
- and
- forming an alternating polarization piezoelectric film stack that comprises at least two piezoelectric films using a molecular beam epitaxy system without removing the substrate from the molecular beam epitaxy system.
24-34. (canceled)
A method of fabricating a bulk acoustic wave resonator, the method comprising:
- forming a first piezoelectric film on a substrate, the first piezoelectric film having a first polarization;
- forming a first polarization inversion interlayer on the first piezoelectric film via molecular beam epitaxy;
- forming a first nucleation layer on the first polarization inversion interlayer;
- and
- forming a second piezoelectric film on the first nucleation layer via molecular beam epitaxy, the second piezoelectric film having a second polarization that is different than the first polarization.
38-39. (canceled)
Dependencies are inferred from the claim text.