Radio frequency (rf) choke for particle reduction and increased conductance in preclean chamber

A method for processing a substrate, comprising:

• generating a plasma over a substrate disposed on a substrate support element of a chamber, wherein the generated plasma generates impurities within an upper region of the chamber;
• removing, via a pump, the impurities from the upper region of the chamber to a lower region of the chamber through a plurality of opening formed through a surface of a plasma impeding element disposed adjacent to the substrate support element;
• and
• grounding the plasma impeding element via one or more straps coupled between the plasma impeding element and a grounded body, wherein the one or more straps are disposed within the lower region of the chamber.

A plasma chamber, comprising:

• a substrate support element configured to support a substrate to be processed in the chamber, wherein the processing the substrate results in impurities within an upper region of the chamber;
• a pump configured to remove the impurities from an upper region of the chamber to a lower region of the chamber;
• a plasma impeding element disposed adjacent to the substrate support element, wherein the plasma impeding element includes a surface with a plurality of openings configured to allow fluid flow from the upper region of the chamber to the lower region of the chamber to facilitate the removal of the impurities;
• and
• one or more straps coupled configured to be coupled between the plasma impeding element and a grounded body, wherein the one or more straps are disposed within the lower region of the chamber.