Nonvolatile memory device with memory cell arrays
AssigneeSamsung Electronics Co., Ltd.
InventorsSeunghwan Song, Seongjin Song, Youngseok Jeong, Kiwhan Song, Wandong Kim, Jeongin Choe, Yonghyuk Choi
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AssigneeSamsung Electronics Co., Ltd.
InventorsSeunghwan Song, Seongjin Song, Youngseok Jeong, Kiwhan Song, Wandong Kim, Jeongin Choe, Yonghyuk Choi
Estimating the term…
A nonvolatile memory device includes a memory cell array including a plurality of planes, a page buffer circuit connected to the memory cell array through a plurality of bit lines, an input/output circuit connected to the page buffer circuit through a plurality of data lines, a control logic circuit controlling an operation for the planes in response to a command, a first command-address pad set electrically connected to the control logic circuit and receiving a first command, and a second command-address pad set electrically connected to the control logic circuit and receiving a second command. A time during which the first command is received overlaps with a time during which the second command is received.
A nonvolatile memory device comprising:
A nonvolatile memory device comprising:
A nonvolatile memory device comprising:
Dependencies are inferred from the claim text.