Positive-type multilayer molecular film photoresist having molecular line structure

A method of fabricating a photoresist pattern, the method comprising:

• providing a multilayer molecular film photoresist that comprises a plurality of molecular lines arranged in a horizontal direction and each extending in an upward direction with respect to a substrate, wherein each molecular line comprises monomolecules linearly connected to each other, the monomolecules comprise multiple inorganic monomolecules comprising metal atoms and an organic monomolecule connected between at least some inorganic monomolecules from among the inorganic monomolecules, and the organic monomolecule included in one of the molecular lines is cross-linked with an inorganic monomolecule in another adjacent molecular line;
• irradiating a region of the multilayer molecular film photoresist with radiation that is an e-beam or EUV, wherein the cross-linking in the region irradiated with the radiation gets broken;
• and
• removing the region, which is exposed to the radiation, of the multilayer molecular film photoresist, by development.