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US 2026/0231820 A1Published application
Semiconductor package having dual transistors and method of making the same
AssigneeAlpha and Omega Semiconductor International LP
InventorsYan Xun Xue, Madhur Bobde, Long-Ching Wang, Zhiqiang Niu, Chunya Wen, Kuan-Hung Li
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Abstract
A semiconductor package comprises a lead frame, a first field-effect transistor (FET), a second FET, a metal clip, and a molding encapsulation. Each of the first FET and the second FET is flipped. A method comprising the steps of providing a lead frame strip; mounting a first FET and a second FET; attaching a metal clip strip; forming a molding encapsulation; and applying a singulation process.
Claims20
A semiconductor package comprising:
- a lead frame comprising
- a first die paddle comprising:
- a source paddle;
- and
- a gate lead;
- and
- a second die paddle comprising:
- a source paddle;
- and
- a gate lead;
- a first field-effect transistor (FET) being flipped and attached to the first die paddle, the first FET comprising:
- a source electrode and a gate electrode on a front surface of the first FET;
- and
- a drain electrode on a back surface of the first FET;
- a second FET being flipped and attached to the second die paddle, the second FET comprising:
- a source electrode and a gate electrode on a front surface of the second FET;
- and
- a drain electrode on a back surface of the second FET;
- a metal clip connecting the drain electrode of the first FET to the drain electrode of the second FET;
- and
- a molding encapsulation enclosing the first FET, the second FET, at least a majority portion of the metal clip, and a majority portion of the lead frame.
18 more elements
A method for fabricating a semiconductor package, the method comprising the steps of:
- providing a lead frame strip comprising a plurality of lead frames, each lead frame of the plurality of lead frames comprising:
- a first die paddle comprising:
- a source paddle;
- and
- a gate lead;
- and
- a second die paddle comprising:
- a source paddle;
- and
- a gate lead;
- attaching a first field-effect transistor (FET) and a second FET to said each lead frame,
- the first FET being flipped and attached to the first die paddle, the first FET comprising:
- a source electrode and a gate electrode on a front surface of the first FET;
- and
- a drain electrode on a back surface of the first FET;
- the second FET being flipped and attached to the second die paddle, the second FET comprising:
- a source electrode and a gate electrode on a front surface of the second FET;
- and
- a drain electrode on a back surface of the second FET;
- providing a metal clip strip comprising a plurality of metal clips, a respective metal clip of the plurality of metal clips connecting the drain electrode of the first FET to the drain electrode of the second FET;
- forming a molding encapsulation enclosing the first FET, the second FET, at least a majority portion of the respective metal clip, and a majority portion of said each lead frame;
- and
- applying a singulation process separating the semiconductor package from adjacent semiconductor packages.
20 more elements
Dependencies are inferred from the claim text.