Method of forming opening in passivation layer and structures thereof

A method, comprising:

• depositing a dielectric layer over a contact pad;
• forming a patterned photosensitive layer over the dielectric layer, wherein the patterned photosensitive layer exposes a portion of the dielectric layer;
• and
• performing an etching process to expose a top surface of the contact pad, wherein the performing the etching process includes performing a dry etching process to etch the exposed portion of the dielectric layer to form a patterned dielectric layer, and after performing the dry etching process, performing a wet etching process to recess sidewall surfaces of the patterned photosensitive layer from corners of the patterned dielectric layer.

A device, comprising:

• a patterned dielectric layer disposed over a contact feature, wherein the patterned dielectric layer defines a lower portion of an opening that exposes the contact feature;
• and
• a patterned photosensitive layer disposed over the patterned dielectric layer, wherein the patterned photosensitive layer defines an upper portion of the opening;
• wherein a bottommost part of a first sidewall surface of the upper portion of the opening is recessed from corners defined at a topmost part of a second sidewall surface of the lower portion of the opening.