Seal ring structure in a semiconductor device and methods for forming the same
AssigneeYangtze Memory Technologies Co., Ltd.
InventorsQian Li, Shu Wu, Liang Xiao
Life of this patent
Estimating the term…
Abstract
In certain aspects, a semiconductor device includes a first semiconductor layer, a first semiconductor structure formed on the first semiconductor layer including a main chip region, and seal ring discontinuous contact structures formed in a seal ring region enclosing the main chip region. Each seal ring discontinuous contact structure includes a seal ring body portion and a through silicon contact (TSC) portion penetrating through the first semiconductor layer and coupled to the seal ring body portion.
Claims20
A semiconductor device, comprising:
- a first semiconductor layer;
- a memory stack structure stacked on the first semiconductor layer in a first direction;
- a source contact structure in contact with the first semiconductor layer, and a portion of the first semiconductor layer is located between the memory stack structure and the source contact structure in the first direction;
- and
- a first seal ring structure surrounding the memory stack structure in a plane perpendicular to the first direction and comprising a first portion and a second portion arranged along the first direction,
- wherein the first portion extends along the first direction and is located at a side of the memory stack structure in a second direction intersecting with the first direction, and the second portion extends through the first semiconductor layer along the first direction and is in contact with the first portion.
A semiconductor device, comprising:
- a memory stack structure;
- a peripheral circuit bonded to the memory stack structure in a first direction;
- a first seal ring structure surrounding the memory stack structure in a plane perpendicular to the first direction and comprising a first portion and a first bonding contact arranged along the first direction;
- and
- a second seal ring structure surrounding the peripheral circuit in a plane perpendicular to the first direction and comprising a third portion and a second bonding contact arranged along the first direction,
- wherein the first bonding contact is bonded to the second bonding contact, and the first bonding contact comprises a plurality of contact structures, and the plurality of contact structures are spaced apart from each other in a second direction intersecting with the first direction or a third direction intersecting with the first direction and the second direction.
A semiconductor device, comprising:
- a semiconductor layer;
- a peripheral circuit disposed on the semiconductor layer in a first direction;
- a memory stack structure bonded to the peripheral circuit in the first direction;
- a first seal ring structure surrounding the memory stack structure in a plane perpendicular to the first direction and comprising a first portion and a first bonding contact arranged along the first direction;
- and
- a second seal ring structure surrounding the peripheral circuit in a plane perpendicular to the first direction and comprising a third portion and a second bonding contact arranged along the first direction,
- wherein the first bonding contact is bonded to the second bonding contact, and the second bonding contact comprises a plurality of contact structures, and the plurality of contact structures are spaced apart from each other in a second direction intersecting with the first direction or a third direction intersecting with the first direction and the second direction.
Dependencies are inferred from the claim text.