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US 2026/0231771 A1Published application
Semiconductor Device and Method of Making IPD Structure on Glass Substrate
AssigneeSTATS ChipPAC Management Pte. Ltd.
InventorsSeungMan Hong, YongTaek Lee, OhYoung Kwon, SoJeong Bae
Life of this patent
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Abstract
A semiconductor device has semiconductor substrate. An integrated passive device (IPD) structure is formed over the semiconductor substrate. The semiconductor substrate and IPD structure are disposed over a glass substrate. The semiconductor substrate, IPD structure, and glass substrate are disposed over a printed circuit board (PCB).
Claims25
A method of making a semiconductor device, comprising:
- providing a semiconductor substrate;
- forming an integrated passive device (IPD) structure over the semiconductor substrate;
- disposing the semiconductor substrate and IPD structure over a glass substrate;
- and
- disposing the semiconductor substrate, IPD structure, and glass substrate over a printed circuit board (PCB).
2 more elements
A method of making a semiconductor device, comprising:
- providing a first substrate;
- forming an integrated passive device (IPD) structure over the first substrate;
- and
- disposing the first substrate and IPD structure over a glass substrate.
1 more element
A semiconductor device, comprising:
- a semiconductor substrate;
- an integrated passive device (IPD) structure formed over the semiconductor substrate;
- a glass substrate attached to the semiconductor substrate opposite the IPD structure;
- and
- a printed circuit board (PCB) with the glass substrate disposed over the PCB.
2 more elements
A semiconductor device, comprising:
- a first substrate;
- an integrated passive device (IPD) structure formed over the first substrate;
- and
- a glass substrate disposed over the first substrate opposite the IPD structure.
1 more element
Dependencies are inferred from the claim text.