Chamfering method and chamfering device
AssigneeTokyo Seimitsu Co., Ltd.
InventorTaira TSURU
Life of this patent
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Abstract
By a chamfering method forming a slope on a perimeter of a wafer to chamfer the wafer, the chamfering method including performing pre-processing to create in advance an irradiation surface to be perpendicular to the slope to be formed, and applying a laser such that the laser is perpendicularly applied to the irradiation surface to penetrate the wafer along the slope, chamfering of the perimeter and the orientation flat (OF) of UWBG material wafers such as 4H-SiC, which are difficult-to-process materials, especially SiC wafers, can be performed using a laser, with suitable quality for post-processes such as polishing.
Claims19
A chamfering method forming a slope on a perimeter of a wafer to chamfer the wafer, the chamfering method comprising:
- performing pre-processing to create in advance an irradiation surface to be perpendicular to the slope to be formed;
- and
- applying a laser such that the laser is perpendicularly applied to the irradiation surface to penetrate the wafer along the slope.
A chamfering device forming a slope on a perimeter of a wafer to chamfer the wafer, the chamfering device comprising:
- a laser application part configured to apply a laser to the wafer;
- a workpiece moving stage configured to hold the wafer and having a structure with five axes including three axes of an X axis, a Y axis, and a Z axis and additional two axes of a yaw axis for rotation and a pitch axis for tilt;
- and
- a control device, wherein
- the control device performs movement of the five axes with a computer program stored in advance, controls the laser application part to create in advance an irradiation surface to be perpendicular to the slope, and then applies the laser such that the laser is perpendicularly applied to the irradiation surface to penetrate the wafer along the slope.
Dependencies are inferred from the claim text.