Semiconductor Device Measurement Method and Semiconductor Device Measurement Apparatus

A measurement system for measuring a semiconductor device including an upper layer structure constituting a part of the semiconductor device and a lower layer structure located below the upper layer structure, the measurement system comprising:

• a measurement apparatus configured to irradiate the semiconductor device with a charged particle beam to measure the semiconductor device;
• and
• a computer system including a processor and a memory, wherein
• the computer system is configured to
• store model data that indicates the semiconductor device and in which a first parameter indicating a feature of the lower layer structure is known,
• store a plurality of measurement conditions for the measurement apparatus,
• perform simulation using the model data under each of the plurality of measurement conditions and acquire a simulation result including at least one of an image or a signal waveform obtained when the semiconductor device represented by the model data is irradiated with the charged particle beam,
• compare the first parameter with each of a plurality of second parameters corresponding to features of the lower layer structure, the second parameters being respectively derived from a plurality of the simulation results, and
• present a recommended measurement condition recommended for measuring the semiconductor device from among the plurality of measurement conditions based on comparison results between the first parameter and the second parameters.

A semiconductor device measurement method for a semiconductor device including an upper layer structure constituting a part of the semiconductor device and a lower layer structure located below the upper layer structure, the semiconductor device measurement method comprising:

• preparing a plurality of measurement conditions for a measurement apparatus that irradiates the semiconductor device with a charged particle beam to measure the semiconductor device;
• acquiring a measurement result for each of the plurality measurement conditions by irradiating a sample of the semiconductor device with a charged particle beam, the measurement result including at least one of an image or a signal waveform of the sample;
• measuring a cross section of the sample and acquiring a first parameter indicating a feature of the lower layer structure;
• comparing the first parameter with each of a plurality of second parameters corresponding to features of the lower layer structure, the second parameters being respectively derived from a plurality of the measurement results;
• and
• presenting a recommended measurement condition recommended for measuring the semiconductor device from among the plurality of measurement conditions based on comparison results between the first parameter and the second parameters.

A measurement system for a semiconductor device including an upper layer structure constituting a part of the semiconductor device and a lower layer structure located below the upper layer structure, the measurement system comprising:

• a measurement apparatus configured to irradiate the semiconductor device with a charged particle beam to measure the semiconductor device;
• a processing apparatus configured to process the semiconductor device;
• and
• a computer system including a processor and a memory, wherein
• the measurement apparatus is configured to
• store a plurality of measurement conditions for the measurement apparatus, and
• acquire a measurement result for each of the plurality of measurement conditions by irradiating a sample of the semiconductor device with the charged particle beam, the measurement result including at least one of an image or a signal waveform of the sample,
• the processing apparatus is configured to process the sample to expose a cross section of the sample, and
• the computer system is configured to
• compare a first parameter indicating a feature of the lower layer structure obtained from a cross section measurement result obtained by measuring the cross section of the sample with each of a plurality of second parameters corresponding to features of the lower layer structure, the second parameters being respectively derived from a plurality of the measurement results, and
• present a recommended measurement condition recommended for measuring the semiconductor device from among the plurality of measurement conditions based on comparison results between the first parameter and the second parameters.