Etching method and manufacturing method of semiconductor device
AssigneeKioxia Corporation
InventorSeigo YAMADA
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Abstract
In one embodiment, an etching method includes etching a structure from inside of a hole or a slit provided in the structure, using a chemical etching solution containing an acid and a polymer. The pH of the acid is less than 5. The polymer is an anionic polymer.
Claims20
An etching method comprising etching a structure from inside of a hole or a slit provided in the structure, using a chemical etching solution containing an acid and a polymer, wherein
- a pH of the acid is less than 5, and
- the polymer is an anionic polymer.
A manufacturing method of a semiconductor device, the method comprising etching a structure from inside of a hole or a slit provided in the structure, using a chemical etching solution containing an acid and a polymer, wherein
- a pH of the acid is less than 5, and
- the polymer is an anionic polymer.
Dependencies are inferred from the claim text.