US 2026/0231503 A1 · SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Abstract

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate having an active area, a plurality of word line structures, a doped region, a plurality of pillar structures, a spacer and a contact. The plurality of word line structures are disposed in the substrate. The extending direction of the word line structure intersects with the extending direction of the active area. The doped region is disposed in the substrate in the active area and located between adjacent word line structures. The plurality of pillar structures are disposed on the substrate to surround the doped region. The spacer is disposed on the sidewalls of the pillar structures, so that the pillar structures and the spacer cover the ends of the active area together. The contact is disposed on the doped region and in contact with the spacer.

Claims20

Dependent claims

A semiconductor structure comprising:

a substrate, having an active area;
a plurality of word line structures, disposed in the substrate, wherein an extension direction of the word line structures intersects with an extension direction of the active area;
a doped region, disposed in the substrate in the active area and located between adjacent word line structures;
a plurality of pillar structures, disposed on the substrate to surround the doped region;
a spacer, disposed on sidewalls of the pillar structures such that the pillar structures and the spacer cover ends of the active area together;
and
a contact, disposed on the doped region and in contact with the spacer.

4 more elements

A manufacturing method of a semiconductor structure, comprising:

providing a substrate, wherein the substrate has an active area, a plurality of word line structures are formed in the substrate, and an extension direction of the word line structures intersects with an extension direction of the active area;
forming a doped region in the substrate in the active area, wherein the doped region is located between adjacent word line structures;
forming a plurality of pillar structures on the substrate, wherein the plurality of pillar structures surround the doped region;
forming a spacer on the sidewalls of the pillar structures, so that the pillar structures and the spacer cover the ends of the active area together;
and
forming a contact on the doped region, wherein the contact is in contact with the spacer.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor structure and manufacturing method thereof

Life of this patent

Semiconductor structure and manufacturing method thereof

Life of this patent

Abstract

Claims20