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US 2026/0231491 A1Published application
Memory Array And Method Used In Forming A Memory Array Comprising Strings Of Memory Cells
AssigneeMicron Technology, Inc.
InventorsJohn D. Hopkins, Nancy M. Lomeli
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Abstract
A memory array comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. A ring is around individual of the channel-material strings in at least one of a lowest of the conductive tiers or a lowest of the insulative tiers. Individual of the rings have a top that is below all of the memory cells. Other embodiments are disclosed.
Claims20
A memory array comprising:
- laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, channel-material strings of memory cells extending through the insulative tiers and the conductive tiers;
- a conductor tier comprising conductor material directly below the vertical stack;
- a ring around individual of the channel-material strings in a lowest of the conductive tiers, the ring having a top that is below all of the memory cells;
- and
- conducting material in the lowest conductive tier, the conducting material being directly against a sidewall of the channel material of the individual channel-material strings directly above the ring, the conducting material being directly against the sidewall of the channel material of the individual channel-material strings directly below the ring, the conducting material in the lowest conductive tier being directly against the conductor material in the conductor tier.
2 more elements
A memory array comprising:
- laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, channel-material strings of memory cells extending through the insulative tiers and the conductive tiers;
- a ring around individual of the channel-material strings in a lowest of the conductive tiers;
- the ring comprising charge-passage material, storage material radially outward of the charge-passage material, and charge-blocking material radially outward of the storage material;
- and
- conducting material in the lowest conductive tier, the conducting material being directly against a sidewall of the channel material of the individual channel-material strings directly above the ring, the conducting material being directly against the sidewall of the channel material of the individual channel-material strings directly below the ring.
2 more elements
A memory array comprising:
- laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers, channel-material strings of memory cells extending through the insulative tiers and the conductive tiers;
- and
- a ring around individual of the channel-material strings in a lowest of the conductive tiers, the ring comprising charge-passage material, storage material radially outward of the charge-passage material, and charge-blocking material radially outward of the storage material;
- the ring having a top surface that is below all of the memory cells and comprises the charge-passage material, the storage material, and the charge-blocking material;
- the ring having a bottom surface that comprises the charge-passage material, the storage material, and the charge-blocking material.
2 more elements
Dependencies are inferred from the claim text.