Semiconductor device

Abstract

A semiconductor device includes a semiconductor substrate and a mold resin covering an upper surface and an end surface of the semiconductor substrate. The semiconductor substrate has an effective region, a breakdown voltage holding region outside the effective region, and an outer peripheral region outside the breakdown voltage holding region, the effective region being a region in which a main current flows, the breakdown voltage holding region being a region in which a p-type breakdown voltage holding structure is disposed. An n+ impurity layer is disposed in at least a portion of a surface layer in the outer peripheral region. A p+ impurity layer is disposed in at least a portion of a surface layer of the n+ impurity layer.

Dependencies are inferred from the claim text.