Display device and electronic device

A semiconductor device comprising:

• a gate electrode;
• a gate insulating layer over the gate electrode;
• an oxide semiconductor layer over the gate insulating layer;
• a source electrode over the oxide semiconductor layer;
• a drain electrode over the oxide semiconductor layer;
• a first insulating layer over the source electrode and the drain electrode;
• a conductive layer over the first insulating layer;
• a second insulating layer over the conductive layer;
• and
• a pixel electrode over the second insulating layer, and electrically connected to one of the source electrode and the drain electrode,
• wherein each of the gate electrode, the source electrode, and the drain electrode includes copper,
• wherein the conductive layer is a stacked structure including a light-transmitting layer and a layer including copper,
• wherein the pixel electrode includes indium and oxygen, and
• wherein the pixel electrode overlaps the conductive layer and a channel formation region of the oxide semiconductor layer.

A semiconductor device comprising:

• a gate electrode;
• a gate insulating layer over the gate electrode;
• an oxide semiconductor layer over the gate insulating layer;
• a source electrode over the oxide semiconductor layer;
• a drain electrode over the oxide semiconductor layer;
• a first insulating layer over the source electrode and the drain electrode;
• a conductive layer over the first insulating layer;
• a second insulating layer over the conductive layer;
• and
• a pixel electrode over the second insulating layer, and electrically connected to one of the source electrode and the drain electrode,
• wherein the first insulating layer is in direct contact with the oxide semiconductor layer, the source electrode, and the drain electrode,
• wherein the second insulating layer includes silicon nitride,
• wherein each of the gate electrode, the source electrode, and the drain electrode includes copper,
• wherein the conductive layer is a stacked structure including a light-transmitting layer and a layer including copper,
• wherein the pixel electrode includes indium and oxygen,
• wherein the pixel electrode overlaps the conductive layer and a channel formation region of the oxide semiconductor layer,
• wherein the conductive layer overlaps at least one of the source electrode and the drain electrode, and
• wherein the conductive layer overlaps the gate electrode.