Semiconductor device

A semiconductor device comprising:

• an oxide semiconductor;
• a conductor;
• a first insulator provided between the oxide semiconductor and the conductor;
• and
• a second insulator facing the first insulator with the oxide semiconductor therebetween,
• wherein the first insulator is configured to capture hydrogen,
• wherein the first insulator has an amorphous structure,
• wherein the second insulator is in contact with at least part of the oxide semiconductor,
• wherein the second insulator has a barrier property against hydrogen,
• wherein the oxide semiconductor has a hydrogen concentration lower than 1×1019 atoms/cm3 in at least part of a region facing the conductor with the first insulator therebetween,
• wherein the first insulator has a hydrogen concentration higher than or equal to 1×1019 atoms/cm3 in at least part of a region between the oxide semiconductor and the conductor, and
• wherein the hydrogen concentration of the oxide semiconductor and the hydrogen concentration of the first insulator are values measured by secondary ion mass spectrometry.

A semiconductor device comprising:

• an oxide semiconductor;
• a conductor;
• a first insulator provided between the oxide semiconductor and the conductor;
• a second insulator facing the first insulator with the oxide semiconductor therebetween,
• a third insulator provided between the conductor and the first insulator;
• and
• a fourth insulator provided between the oxide semiconductor and the second insulator,
• wherein the first insulator and the fourth insulator comprise dangling bonds configured to capture or fix hydrogen included in the oxide semiconductor,
• wherein the first insulator and the fourth insulator are metal oxides comprising an amorphous structure,
• wherein the second insulator and the third insulator have a barrier property against hydrogen,
• wherein the oxide semiconductor has a hydrogen concentration lower than 1×1019 atoms/cm3 in at least part of a region facing the conductor with the first insulator therebetween,
• wherein the first insulator has a hydrogen concentration higher than or equal to 1×1019 atoms/cm3 in at least part of a region between the oxide semiconductor and the conductor, and
• wherein the hydrogen concentration of the oxide semiconductor and the hydrogen concentration of the first insulator are values measured by secondary ion mass spectrometry.