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US 2026/0231418 A1Published application
Memory device and method of manufacturing the memory device
AssigneeSK hynix Inc.
InventorTae Woo KIM
Life of this patent
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Abstract
A memory device according to an embodiment of the present disclosure includes cell plugs extending through a stack, select plugs coupled to the cell plugs and disposed over the stack, select lines surrounding the select plugs and disposed over the stack, and an isolation structure separating the select lines and contacting the select plugs.
Claims20
A memory device comprising:
- a plurality of cell plugs extending through a stack;
- each of a plurality of select plugs coupled to a different one of the plurality of cell plugs and disposed over the stack;
- a plurality of select lines disposed over the stack, a first select line surrounding a first plurality of the plurality of select plugs and a second select line surrounding a second plurality of the plurality of select plugs;
- and
- an isolation structure separating the first select line from the second select line and contacting a subset of the plurality of select plugs.
2 more elements
Dependencies are inferred from the claim text.