High-density one-time programmable memory

A one-time programmable memory, comprising an array formed by arranging M×N memory cells, M and N being predetermined natural numbers, wherein each memory cell comprises an anti-fuse storage transistor and a selection transistor, wherein

• a gate of the anti-fuse storage transistor is connected to a first word line WP, a gate of the selection transistor is connected to a second word line WS, a first current end of the selection transistor is connected to a second current end of the anti-fuse storage transistor, and a second current end of the selection transistor is connected to a first bit line BL;
• and
• the selection transistor comprises a source region with a second conductivity type, a drain region with the second conductivity type and a substrate with a first conductivity type, wherein the source region of the selection transistor comprises a second conductivity type region and a second-conductivity-type lightly doped region, the drain region only has a second conductivity type region, a doping concentration of the second conductivity type region in the source region is same as that of the second conductivity type region in the drain region, and a doping concentration of the second-conductivity-type lightly doped region is lower than that of the second conductivity type region.