Manufacturing method of memory device

Abstract

A manufacturing method of a memory device including: forming a landing pad over a substrate; forming a first insulating structure over the substrate and the landing pad; forming a patterned mask layer over the insulating structure; removing portions of the first insulating structure by the patterned mask layer to form a container exposing the landing pad; forming an electrode structure over the substrate, wherein the electrode structure comprises a first portion disposed on the patterned mask layer and a second portion disposed in the container; removing the first portion of the electrode structure by a first etching back process; removing the patterned mask layer by a second etching back process to form recesses on the first insulating structure and beside the second portion of the electrode structure; and forming a second insulating structure in the recesses.

Dependencies are inferred from the claim text.