Semiconductor devices including word lines

A semiconductor device comprising:

• first channel patterns extending on a substrate and extending in a first direction, the first channel patterns respectively including a first surface and a second surface spaced apart from the first surface in the first direction;
• bit lines in contact with the first surfaces of the first channel patterns and extending in a second direction intersecting the first direction;
• second channel patterns in contact with the bit lines and adjacent to the first channel patterns and extending in the first direction;
• information storage elements in contact with the second surfaces of the first channel patterns;
• and
• word lines extending in a third direction, wherein the third direction intersects the first direction and the second direction, between the first channel patterns and the second channel patterns,
• wherein at least a portion of the second channel patterns overlap the word lines and the information storage elements in the second direction, and
• wherein the information storage elements overlap the first channel patterns and the word lines in the first direction.

A semiconductor device, comprising:

• a first channel pattern extending on a substrate in a first direction, the first channel pattern including a first surface and a second surface spaced apart from the first surface in the first direction;
• a bit line in contact with the first surface of the first channel pattern and extending in a second direction, wherein the second direction intersects the first direction;
• a second channel pattern in contact with the bit line and adjacent to the first channel pattern, and extending in the first direction;
• an information storage element in contact with the second surface of the first channel pattern;
• a word line disposed between the first channel pattern and the second channel pattern and adjacent to the information storage element in the first direction;
• and
• a plate electrode spaced apart from the bit line in the first direction and in contact with the second channel pattern,
• wherein at least a portion of the word line extends in a third direction, wherein the third direction intersects the first direction and the second direction,
• wherein the second channel pattern includes a first impurity region in contact with the bit line, a second impurity region spaced apart from the first impurity region in the first direction, and a second channel region between the first impurity region and the second impurity region, and
• wherein the second channel region overlaps the word line and the information storage element in the second direction.