Sub-module

A sub-module, comprising:

• an insulated gate bipolar transistor (IGBT) that is electrically connectable to an external power source or load and has a surface area in one direction greater than that of a surface in another direction;
• a heat-dissipating member coupled to one surface of the IGBT in the one direction to cool heat generated from the IGBT;
• and
• a capacitor member that is electrically connected to the IGBT and is disposed to face the other surface of the IGBT in the one direction,
• wherein the heat-dissipating member comprises:
• a heat-dissipating body coupled to the one surface of the IGBT in the one direction;
• a heat-dissipating support part that continuously extends between the heat-dissipating body and the capacitor member and is coupled to each of the heat-dissipating body and the capacitor member;
• and
• an IGBT-accommodating part that is defined by being partially surrounded by the heat-dissipating body and the capacitor member, and accommodates the IGBT.