Controlling rf power for on-wafer process improvement

A method for adjustment of RF power delivered to a plasma chamber, the method comprising:

• storing or accessing first correlation data, the first correlation data based on film thickness values and, for each film thickness value, a corresponding matching network value, wherein each matching network value is a value for a parameter associated with a matching network coupled between an RF source and a plasma chamber;
• storing or accessing second correlation data, the second correlation data based on film thickness values and, for each film thickness value, a corresponding RF power setting for the RF source;
• for a current wafer run for a semiconductor wafer, determining a current matching network value for the parameter associated with the matching network;
• using the current matching network value and the first correlation data, determining a current film thickness for the semiconductor wafer of the current wafer run;
• using the current film thickness and the second correlation data, determining the corresponding RF power setting for the RF source;
• and
• causing adjustment of the RF power being output by the RF source based on the corresponding RF power setting to achieve a new film thickness for the semiconductor wafer of the current wafer run that is within a desired film thickness range.

A system for adjustment of RF power delivered to a plasma chamber, the system comprising:

• a matching network configured to be coupled between an RF source and a plasma chamber;
• one or more memory devices configured to store correlation data based on:
• film thickness values and, for each film thickness value, a corresponding matching network value, wherein each matching network value is a value for a parameter associated with the matching network;
• and
• for each film thickness value, a corresponding RF power setting for the RF source;
• and
• a control circuit operably coupled to the one or more memory devices, the control circuit configured to:
• for a current wafer run for a semiconductor wafer, determine a current matching network value for the parameter associated with the matching network;
• using the current matching network value and the correlation data, determine the corresponding RF power setting;
• and
• transmit a control signal to cause an adjustment of an RF power being delivered to the plasma chamber based on the corresponding RF power setting to achieve a new film thickness for the semiconductor wafer of the current wafer run that is within a desired film thickness range.