Optical proximity correction method and method of manufacturing mask by using the same

An optical proximity correction (OPC) method comprising:

• receiving a design layout of a jumper via pattern to be formed on a substrate, wherein the substrate comprises a plurality of metal wiring layers;
• identifying a first via pattern and a second via pattern, each connecting different metal wiring layers of the plurality of metal wiring layers, in the design layout;
• based on a distance between the first via pattern and the second via pattern being less than a first reference value and a critical dimension or a resistance value of the jumper via pattern being beyond a target range, selecting the first via pattern and the second via pattern as objects of sequential OPC;
• setting the first via pattern as a hidden target that does not undergo OPC, setting the second via pattern as a real target that undergoes OPC, and performing first OPC;
• setting the first via pattern as the real target, setting the second via pattern as the hidden target, and performing second OPC;
• generating a jumper via OPC pattern by merging a result of the first OPC with a result of the second OPC;
• and
• performing mask rule check (MRC) or optical rule check (ORC) on the jumper via OPC pattern.

A method of manufacturing a mask, the method comprising:

• receiving a design layout comprising a jumper via pattern connecting a first via pattern with a second via pattern, the first via pattern and the second via pattern each connecting different metal layers;
• setting the first via pattern as a hidden target that does not undergo optical proximity correction (OPC), setting the second via pattern as a real target that undergoes OPC, and performing first OPC;
• performing mask rule check (MRC) or optical rule check (ORC) on a result of the first OPC;
• setting the first via pattern as the real target that undergoes OPC, setting the second via pattern as the hidden target that does not undergo OPC, and performing second OPC;
• merging the result of the first OPC with a result of the second OPC;
• performing the MRC or the ORC on a result of the merge;
• transferring data on a design layout corresponding to the result of the merge as mask tape-out (MTO) design data;
• preparing mask data based on the MTO design data;
• and
• exposing a mask substrate based on the mask data.